vs-gb70la60uf www.vishay.com vishay semiconductors revision: 01-feb-12 1 document number: 93104 for technical questions, contact: diodesamericas@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 "low side chopper" igbt sot-227 (warp 2 speed igbt), 70 a features ? npt warp 2 speed igbt technology with positive temperature coefficient ?square rbsoa ?low v ce(on) ?fred pt ? hyperfast rectifier ? fully isolated package ? very low internal inductance ( ? 5 nh typical) ? industry standard outline ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec benefits ? designed for increased operating efficiency in power conversion: ups, smps, welding, induction heating ? easy to assemble and parallel ? direct mounting to heatsink ? plug-in compatible with other sot-227 packages ? higher switching frequency up to 150 khz ? lower conduction losse s and switching losses ? low emi, requires less snubbing product summary v ces 600 v i c dc 70 a at 88 c v ce(on) typical at 70 a, 25 c 2.23 v i f dc 70 a at 86 c sot-227 absolute maximum ratings parameter symbol test conditions max. units collector to emitter voltage v ces 600 v continuous colle ctor current i c t c = 25 c 111 a t c = 80 c 76 pulsed collector current i cm 120 clamped inductive load current i lm 120 diode continuous forward current i f t c = 25 c 113 t c = 80 c 75 peak diode forward current i fm 200 gate to emitter voltage v ge 20 v power dissipation, igbt p d t c = 25 c 447 w t c = 80 c 250 power dissipation, diode p d t c = 25 c 236 t c = 80 c 132 rms isolation voltage v isol any terminal to case, t = 1 min 2500 v
vs-gb70la60uf www.vishay.com vishay semiconductors revision: 01-feb-12 2 document number: 93104 for technical questions, contact: diodesamericas@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units collector to emitter breakdown voltage v br(ces) v ge = 0 v, i c = 1 ma 600 - - v collector to emitter voltage v ce(on) v ge = 15 v, i c = 35 a - 1.69 1.88 v ge = 15 v, i c = 70 a - 2.23 2.44 v ge = 15 v, i c = 35 a, t j = 125 c - 2.07 2.31 v ge = 15 v, i c = 70 a, t j = 125 c - 2.89 3.21 gate threshold voltage v ge(th) v ce = v ge , i c = 500 a 3 3.9 5 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 9 - mv/c collector to emitter leakage current i ces v ge = 0 v, v ce = 600 v - 1 100 a v ge = 0 v, v ce = 600 v, t j = 125 c - 0.07 2.0 ma diode reverse breakdown voltage v br i r = 1 ma 600 - - v diode forward voltage drop v fm i c = 35 a, v ge = 0 v - 1.8 2.33 v i c = 70 a, v ge = 0 v - 2.13 2.71 i c = 35 a, v ge = 0 v, t j = 125 c - 1.35 1.81 i c = 70 a, v ge = 0 v, t j = 125 c - 1.7 2.32 diode reverse leakage current i rm v r = v r rated - 0.1 50 a t j = 125 c, v r = v r rated - 0.01 3 ma gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units total gate charge (turn-on) q g i c = 50 a, v cc = 400 v, v ge = 15 v - 320 - nc gate to emitter charge (turn-on) q ge -42- gate to collector charge (turn-on) q gc - 110 - turn-on switching loss e on i c = 70 a, v cc = 360 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 25 c energy losses include tail and diode recovery (see fig. 18) -1.15- mj turn-off switching loss e off -1.16- total switching loss e tot -2.31- turn-on switching loss e on i c = 70 a, v cc = 360 v, v ge = 15 v, r g = 5 ?? l = 500 h, t j = 125 c -1.27- turn-off switching loss e off -1.28- total switching loss e tot -2.55- turn-on delay time t d(on) - 208 - ns rise time t r -69- turn-off delay time t d(off) - 208 - fall time t f - 100 - reverse bias safe operating area rbsoa t j = 150 c, i c = 120 a, r g = 22 ?? v ge = 15 v to 0 v, v cc = 400 v, v p = 600 v fullsquare diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v -5993ns diode peak reverse current i rr -46a diode recovery charge q rr - 118 279 nc diode reverse recovery time t rr i f = 50 a, di f /dt = 200 a/s, v r = 200 v, t j = 125 c - 130 159 ns diode peak reverse current i rr -1113a diode recovery charge q rr - 715 995 nc
vs-gb70la60uf www.vishay.com vishay semiconductors revision: 01-feb-12 3 document number: 93104 for technical questions, contact: diodesamericas@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum dc igbt collector current vs. case temperature fig. 2 - igbt reverse bias soa t j = 150 c, v ge = 15 v fig. 3 - typical igbt collector current characteristics fig. 4 - typical igbt zero gate voltage collector current thermal and mechanical specifications parameter symbol min. typ. max. units maximum junction and storage temperature range t j , t stg - 40 - 150 c thermal resistance, junction to case igbt r thjc - - 0.28 c/w diode - - 0.53 thermal resistance, case to sink per module r thcs -0.05- mounting torque, 6-32 or m3 screw - - 1.3 nm weight -30-g allowable case temperature (c) i c - continuous collector current (a) 0 20406080 120 100 0 160 100 120 140 20 40 60 80 i c (a) v ce (v) 1 10 100 1000 0.01 0.1 1 1000 10 100 i c (a) v ce (v) 024 135 0 200 25 50 100 75 150 125 175 t j = 125 c t j = 25 c i ces (ma) v ces (v) 100 200 300 400 500 600 0.0001 1 0.01 0.1 0.001 t j = 125 c t j = 25 c
vs-gb70la60uf www.vishay.com vishay semiconductors revision: 01-feb-12 4 document number: 93104 for technical questions, contact: diodesamericas@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical igbt threshold voltage fig. 6 - typical igbt collector to emitter voltage vs. junction temperature, v ge = 15 v fig. 7 - maximum dc forward current vs. case temperature fig. 8 - typical diode forward characteristics fig. 9 - typical igbt energy loss vs. i c t j = 125 c, l = 500 h, v cc = 360 v, r g = 5 ? , v ge = 15 v fig. 10 - typical igbt switching time vs. i c t j = 125 c, l = 500 h, v cc = 360 v, r g = 5 ? , v ge = 15 v v geth (v) i c (ma) 0.0002 0.0004 0.0006 0.0008 0.001 2.0 4.5 3.0 3.5 4.0 2.5 t j = 25 c t j = 125 c v ce (v) t j (c) 10 50 90 30 70 130 110 150 1 4 3 2 100 a 70 a 35 a allowable case temperature (c) i f - continuous forward current (a) 020 60 100 40 80 120 0 160 100 120 140 20 40 60 80 i f (a) v fm (v) 0 0.5 1.5 1.0 2.0 2.5 3.0 3.5 0 200 25 75 100 150 125 175 50 t j = 125 c t j = 25 c energy (mj) i c (a) 0 20406080 0.00 1.50 0.50 1.00 0.75 1.25 0.25 e off e on switching time (ns) i c (a) 010 70 30 50 60 40 20 80 10 1000 100 t d(off) t d(on) t f t r
vs-gb70la60uf www.vishay.com vishay semiconductors revision: 01-feb-12 5 document number: 93104 for technical questions, contact: diodesamericas@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - typical t rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 12 - typical i rr diode vs. di f /dt v rr = 200 v, i f = 50 a fig. 13 - typical q rr diode vs. di f /dt v r = 200 v, i f = 50 a fig. 14 - maximum thermal impedance z thjc characteristics (igbt) t rr (ns) di f /dt (a/s) 100 1000 20 170 45 95 120 145 70 t j = 125 c t j = 25 c i rr (a) di f /dt (a/s) 100 1000 0 30 10 20 5 15 25 t j = 125 c t j = 25 c q rr (nc) di f /dt (a/s) 100 1000 50 1250 450 850 250 650 1050 t j = 125 c t j = 25 c 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 100 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc
vs-gb70la60uf www.vishay.com vishay semiconductors revision: 01-feb-12 6 document number: 93104 for technical questions, contact: diodesamericas@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 15 - maximum thermal impedance z thjc characteristics (diode) fig. 16 - clamped inductive load test circuit fig. 17 - pulsed collector current test circuit fig. 18 - switching loss test circuit 0.001 0.1 0.01 1 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance junction to case (c/w) 100 10 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 dc * driver same type as d.u.t.; v c = 80 % of v ce(max) * note: due to the 50 v power supply, pulse width and inductor will increase to obtain id 50 v 1000 v d.u.t. l v c * 2 1 r g v cc d.u.t. r = v cc i cm + - l diode clamp/ d.u.t. d.u.t./ driver - 5 v + - r g v cc + -
vs-gb70la60uf www.vishay.com vishay semiconductors revision: 01-feb-12 7 document number: 93104 for technical questions, contact: diodesamericas@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 19 - switching loss waveforms test circuit ordering information table circuit configuration t = 5 s t d(on) t f t r 90 % t d(off) 10 % 90 % 10 % 5 % v c i c e on e off e ts = (e on + e off ) 1 2 3 2 - insulated gate bipolar transistor (igbt) 3 - b = igbt generation 5 4 - current rating (70 = 70 a) 5 - circuit configuration (l = low side chopper) 6 - package indicator (a = sot-227) 7 - voltage rating (60 = 600 v) 9 - f = f/w fred pt ? diode 8 - speed/type (u = ultrafast igbt) device code 5 1 3 2 4 6 7 8 9 g vs- b 70 l a 60 u f 1 - vishay semiconductors product 2 1 3 4 links to related documents dimensions http://www.vishay.com/doc?95036 packaging information http://www.vishay.com/doc?95037
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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